2SC4672T100P
TRANS NPN 50V 2A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor NPN Bipolar Junction Transistor, part number 2SC4672T100P. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 2A. With a transition frequency of 210MHz and a minimum DC current gain (hFE) of 82 at 500mA and 2V, it is suitable for applications requiring efficient switching and amplification. The transistor exhibits a Vce(sat) of 350mV at 50mA and 1A, with a collector cutoff current of 100nA. Designed for surface mounting in the MPT3 (TO-243AA) package, it offers a maximum power dissipation of 500mW and operates up to a junction temperature of 150°C. This component is commonly utilized in industrial, automotive, and consumer electronics for general-purpose switching and amplification tasks. Supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 500mA, 2V |
| Frequency - Transition | 210MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
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