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2SC4617EBHZGTLR

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2SC4617EBHZGTLR

TRANS NPN 50V 0.15A EMT3F

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

Quality Control: Learn More

Rohm Semiconductor NPN Bipolar Junction Transistor, part number 2SC4617EBHZGTLR. This device features a 50V collector-emitter breakdown voltage and a 150mA maximum collector current. It offers a minimum DC current gain (hFE) of 120 at 1mA and 6V, with a transition frequency of 180MHz. Designed for surface mounting, it is housed in an EMT3F (SOT-416FL) package. The maximum power dissipation is rated at 150mW, and the operating junction temperature reaches 150°C. This component meets AEC-Q101 qualification standards, making it suitable for automotive applications. The collector cutoff current is a maximum of 100nA (ICBO). It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-89, SOT-490
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 5mA, 50mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 6V
Frequency - Transition180MHz
Supplier Device PackageEMT3F (SOT-416FL)
GradeAutomotive
Current - Collector (Ic) (Max)150 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max150 mW
QualificationAEC-Q101

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