2SC4617EBHZGTLR
TRANS NPN 50V 0.15A EMT3FManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor NPN Bipolar Junction Transistor, part number 2SC4617EBHZGTLR. This device features a 50V collector-emitter breakdown voltage and a 150mA maximum collector current. It offers a minimum DC current gain (hFE) of 120 at 1mA and 6V, with a transition frequency of 180MHz. Designed for surface mounting, it is housed in an EMT3F (SOT-416FL) package. The maximum power dissipation is rated at 150mW, and the operating junction temperature reaches 150°C. This component meets AEC-Q101 qualification standards, making it suitable for automotive applications. The collector cutoff current is a maximum of 100nA (ICBO). It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | EMT3F (SOT-416FL) |
| Grade | Automotive |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
| Qualification | AEC-Q101 |
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