2SC4132T100R
TRANS NPN 120V 2A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor NPN Bipolar Junction Transistor (BJT), part number 2SC4132T100R. This device features a 120V collector-emitter breakdown voltage and a maximum collector current of 2A. With a transition frequency of 80MHz and a power dissipation rating of 2W, it is suitable for applications requiring moderate switching speeds and current handling. The DC current gain (hFE) is a minimum of 180 at 100mA and 5V. The transistor is supplied in a TO-243AA (MPT3) surface mount package, delivered on tape and reel. It is designed for operation up to 150°C (TJ). Typical applications include power switching and amplification circuits in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 100mA, 5V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 2 W |
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