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2SC4132T100R

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2SC4132T100R

TRANS NPN 120V 2A MPT3

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

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Rohm Semiconductor NPN Bipolar Junction Transistor (BJT), part number 2SC4132T100R. This device features a 120V collector-emitter breakdown voltage and a maximum collector current of 2A. With a transition frequency of 80MHz and a power dissipation rating of 2W, it is suitable for applications requiring moderate switching speeds and current handling. The DC current gain (hFE) is a minimum of 180 at 100mA and 5V. The transistor is supplied in a TO-243AA (MPT3) surface mount package, delivered on tape and reel. It is designed for operation up to 150°C (TJ). Typical applications include power switching and amplification circuits in industrial and consumer electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2V @ 100mA, 1A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 100mA, 5V
Frequency - Transition80MHz
Supplier Device PackageMPT3
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)120 V
Power - Max2 W

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