2SC4102T106S
TRANS NPN 120V 0.05A UMT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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The Rohm Semiconductor NPN bipolar transistor, part number 2SC4102T106S, is designed for surface mount applications on UMT3 packages. This component features a collector-emitter breakdown voltage of 120V, with a maximum collector current (Ic) of 50mA and a collector current cutoff of 0.5µA. Its transition frequency is 140MHz, and it dissipates a maximum power of 200mW. The minimum DC current gain (hFE) is specified at 180 at 2mA collector current and 6V collector-emitter voltage. Saturation voltage (Vce Sat) is a maximum of 500mV at 1mA base current and 10mA collector current. This device operates at junction temperatures up to 150°C and is supplied in Tape & Reel packaging. It finds application in industrial equipment and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA, 6V |
| Frequency - Transition | 140MHz |
| Supplier Device Package | UMT3 |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 200 mW |
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