2SC4081T106S
TRANS NPN 50V 0.15A UMT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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The Rohm Semiconductor NPN Bipolar Junction Transistor (BJT), part number 2SC4081T106S, is a high-performance component designed for demanding applications. This surface mount device features a 50V collector-emitter breakdown voltage and a maximum collector current of 150mA. With a transition frequency of 180MHz and a maximum power dissipation of 200mW, it is suitable for use in various electronic circuits. The UMT3 package, equivalent to SC-70/SOT-323, offers a compact footprint for space-constrained designs. Key electrical characteristics include a minimum DC current gain (hFE) of 120 at 1mA/6V and a collector cutoff current of 100nA (ICBO). The Vce saturation is specified at 400mV at 5mA/50mA. This transistor operates reliably at junction temperatures up to 150°C. It finds application in consumer electronics, industrial control systems, and telecommunications equipment. The component is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | UMT3 |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
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