2SC3415STPP
TRANS NPN 300V 0.1A SPTManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor NPN Bipolar Junction Transistor, part number 2SC3415STPP. This through-hole device offers a collector-emitter breakdown voltage of 300V and a continuous collector current capability of 100mA. Featuring a transition frequency of 100MHz and a maximum power dissipation of 300mW, the 2SC3415STPP exhibits a minimum DC current gain (hFE) of 56 at 10mA, 10V. Its saturation voltage (Vce) is specified at 2V maximum for a base current of 5mA and collector current of 50mA. The transistor operates at temperatures up to 150°C (TJ) and is supplied in an SPT package on tape and reel. Applications include general-purpose amplification and switching in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-72 Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 10mA, 10V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SPT |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 300 mW |