2SC3415STPN
TRANS NPN 300V 0.1A SPTManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SC3415STPN is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This component features a maximum collector-emitter breakdown voltage of 300V and a continuous collector current handling capability of 100mA. The device exhibits a transition frequency of 100MHz and a maximum power dissipation of 300mW. Key electrical characteristics include a minimum DC current gain (hFE) of 56 at 10mA collector current and 10V collector-emitter voltage, and a collector cutoff current (ICBO) of 500nA maximum. The saturation voltage (Vce(sat)) is specified as 2V maximum at 5mA base current and 50mA collector current. Supplied in the SPT package, this through-hole mounted transistor is available on tape and reel (TR) for automated assembly processes. Applications for this component are found in consumer electronics, industrial control systems, and power management circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-72 Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 56 @ 10mA, 10V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | SPT |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 300 mW |
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