2SC2389STPR
TRANS GP BJT NPN 120V 0.05A 3-PIManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor NPN Bipolar Junction Transistor (BJT) with part number 2SC2389STPR. This through-hole component features a 120 V collector-emitter breakdown voltage and a continuous collector current capability of 50 mA. The device offers a high minimum DC current gain (hFE) of 820 at 1 mA and 5 V, with a saturation voltage (Vce Sat) of 300 mV at 5 mA collector current and 50 mA base current. It is rated for a maximum power dissipation of 300 mW and an operating junction temperature of 150°C. Packaged in SPT with formed leads, this transistor is supplied in Tape & Box (TB) packaging. Applications include general-purpose switching and amplification in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | SC-72 Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 820 @ 1mA, 5V |
| Supplier Device Package | SPT |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 300 mW |
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