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2SC2389STPR

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2SC2389STPR

TRANS GP BJT NPN 120V 0.05A 3-PI

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

Quality Control: Learn More

Rohm Semiconductor NPN Bipolar Junction Transistor (BJT) with part number 2SC2389STPR. This through-hole component features a 120 V collector-emitter breakdown voltage and a continuous collector current capability of 50 mA. The device offers a high minimum DC current gain (hFE) of 820 at 1 mA and 5 V, with a saturation voltage (Vce Sat) of 300 mV at 5 mA collector current and 50 mA base current. It is rated for a maximum power dissipation of 300 mW and an operating junction temperature of 150°C. Packaged in SPT with formed leads, this transistor is supplied in Tape & Box (TB) packaging. Applications include general-purpose switching and amplification in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseSC-72 Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic300mV @ 5mA, 50mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce820 @ 1mA, 5V
Supplier Device PackageSPT
Current - Collector (Ic) (Max)50 mA
Voltage - Collector Emitter Breakdown (Max)120 V
Power - Max300 mW

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