2SC2389STPE
TRANS GP BJT NPN 120V 0.05A 3-PIManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor NPN Bipolar Junction Transistor (BJT), part number 2SC2389STPE. This general-purpose transistor offers a collector-emitter breakdown voltage of 120V and a continuous collector current capability of 50mA. It features a maximum power dissipation of 300mW and a low collector cutoff current of 500nA (ICBO). The DC current gain (hFE) is a minimum of 270 at 200mA and 2V. This through-hole component is supplied in an SC-72 package with formed leads, available on tape and reel. The Vce saturation voltage is specified at a maximum of 200mV with a base current of 25mA and collector current of 500mA. The operating junction temperature can reach 150°C. This device is suitable for applications in consumer electronics and general switching circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-72 Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 25mA, 500mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 270 @ 200mA, 2V |
| Supplier Device Package | SPT |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 300 mW |
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