2SB1580T100
TRANS PNP DARL 100V 2A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor PNP Darlington Bipolar Junction Transistor, part number 2SB1580T100. This device offers a 100V collector-emitter breakdown voltage and a continuous collector current of 2A. Key specifications include a minimum DC current gain (hFE) of 1000 at 1A, 2V, and a transition frequency of 50MHz. The transistor is rated for 2W maximum power dissipation and operates at temperatures up to 150°C (TJ). It is supplied in a MPT3 package, specifically the TO-243AA, for surface mounting and comes on a Tape & Reel (TR). This component is suitable for applications requiring high current gain and moderate switching speeds, commonly found in power control and switching circuits within the industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 1A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 1A, 2V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 2 W |
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