2SB1561T100Q
TRANS PNP 60V 2A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SB1561T100Q is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This component features a 60V collector-emitter breakdown voltage and a maximum collector current of 2A. With a transition frequency of 200MHz and a power dissipation of 2W, it is suitable for general-purpose amplification and switching applications. The DC current gain (hFE) is a minimum of 120 at 500mA and 2V. Saturation voltage (Vce(sat)) is a maximum of 350mV at 50mA and 1A. This device is supplied in the MPT3 package, which is equivalent to the TO-243AA, and is delivered on tape and reel. It is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 50mA, 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 2V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 2 W |
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