2SB1412TLR
TRANS PNP 20V 5A CPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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The Rohm Semiconductor 2SB1412TLR is a PNP bipolar junction transistor designed for demanding applications. This component offers a collector current (Ic) capability of up to 5A and a collector-emitter breakdown voltage (Vce) of 20V. It features a transition frequency (fT) of 120MHz and a maximum power dissipation of 1W. The DC current gain (hFE) is a minimum of 180 at 500mA and 2V, with a low saturation voltage (Vce(sat)) of 1V at 4A collector current and 100mA base current. The device exhibits a maximum collector cutoff current (Icbo) of 500nA and operates at an ambient temperature of up to 150°C. Packaged in a TO-252-3, DPAK (CPT3) surface mount configuration and supplied on tape and reel, the 2SB1412TLR is suitable for use in power management, automotive, and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 4A |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 500mA, 2V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | CPT3 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 1 W |
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