2SB1412TLP
TRANS PNP 20V 5A CPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SB1412TLP is a PNP bipolar junction transistor designed for demanding applications. This component features a 20V collector-emitter breakdown voltage and a maximum collector current of 5A, making it suitable for power switching and amplification tasks. With a transition frequency of 120MHz and a power dissipation of 1W, it offers robust performance. The device exhibits a minimum DC current gain (hFE) of 82 at 500mA and 2V, with a Vce(sat) of 1V at 100mA and 4A. Its low collector cutoff current is rated at 500nA (ICBO). The 2SB1412TLP is packaged in a TO-252-3, DPAK (SC-63) surface-mount configuration, supplied on tape and reel for automated assembly. This transistor finds application in automotive, industrial, and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 4A |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 500mA, 2V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | CPT3 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 1 W |
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