2SB1386T100R
TRANS PNP 20V 5A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SB1386T100R is a PNP bipolar junction transistor (BJT) designed for demanding applications. This device features a 20V collector-emitter breakdown voltage and a maximum continuous collector current of 5A. With a transition frequency of 120MHz and a maximum power dissipation of 2W, it is suitable for power switching and amplification circuits. The minimum DC current gain (hFE) is 180 at 500mA and 2V, and the collector cutoff current is a low 500nA. The transistor is provided in a Tape & Reel package, utilizing the MPT3 surface mount form factor (TO-243AA). This component finds application in various industrial and consumer electronics, including power management and motor control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 4A |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 500mA, 2V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 2 W |
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