2SB1386T100Q
TRANS PNP 20V 5A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SB1386T100Q is a PNP bipolar junction transistor designed for demanding applications. This surface mount device, housed in an MPT3 (TO-243AA) package, offers a maximum collector current of 5A and a collector-emitter breakdown voltage of 20V. It features a transition frequency of 120MHz and a power dissipation of 2W. The minimum DC current gain (hFE) is 120 at 500mA and 2V, with a Vce(sat) of 1V at 100mA and 4A. The collector cutoff current (ICBO) is rated at a maximum of 500nA. This component is suitable for use in power management and general-purpose amplification circuits across various industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 4A |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 2V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 2 W |