2SB1316TL
TRANS PNP DARL 100V 2A CPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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The Rohm Semiconductor 2SB1316TL is a PNP Darlington bipolar transistor designed for high-gain applications. This device offers a 100V collector-emitter breakdown voltage and a continuous collector current capability of 2A. With a maximum power dissipation of 10W and a transition frequency of 50MHz, it is suitable for demanding switching and amplification tasks. The transistor features a high DC current gain (hFE) of 1000 at 1A and 2V. It is supplied in a TO-252-3, DPAK (SC-63) surface mount package, specifically the CPT3 supplier device package, and is available on tape and reel for automated assembly. This component finds application in power management and control circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Darlington |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 1mA, 1A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 1000 @ 1A, 2V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | CPT3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 10 W |
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