2SB1308T100Q
TRANS PNP 20V 3A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SB1308T100Q is a PNP bipolar junction transistor designed for surface mount applications. This component offers a 20V collector-emitter breakdown voltage and a maximum continuous collector current of 3A. It features a transition frequency of 120MHz and a power dissipation of 2W. The device exhibits a minimum DC current gain (hFE) of 120 at 500mA and 2V, with a saturation voltage (Vce(sat)) of 450mV at 150mA and 1.5A. The collector cutoff current (ICBO) is specified at a maximum of 500nA. The operating junction temperature range extends to 150°C. Packaged in a TO-243AA (MPT3) format, this transistor is supplied on a tape and reel. It finds application in general-purpose amplification and switching circuits across various electronic equipment.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 150mA, 1.5A |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 2V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 2 W |
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