2SB1275TLP
TRANS PNP 160V 1.5A CPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor PNP Bipolar Junction Transistor, part number 2SB1275TLP. This PNP transistor offers a 160V collector-emitter breakdown voltage and a continuous collector current of 1.5A. It features a transition frequency of 50MHz and a maximum power dissipation of 10W. The device is supplied in a CPT3 package, suitable for surface mounting via Tape & Reel (TR) packaging. Key parameters include a Vce(sat) of 2V at 100mA/1A and a DC current gain (hFE) of at least 82 at 100mA/5V. The maximum collector cutoff current (ICBO) is 1µA, with an operating junction temperature up to 150°C. This component is utilized in industrial and automotive applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 100mA, 5V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | CPT3 |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 10 W |
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