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2SB1275TLP

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2SB1275TLP

TRANS PNP 160V 1.5A CPT3

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

Quality Control: Learn More

Rohm Semiconductor PNP Bipolar Junction Transistor, part number 2SB1275TLP. This PNP transistor offers a 160V collector-emitter breakdown voltage and a continuous collector current of 1.5A. It features a transition frequency of 50MHz and a maximum power dissipation of 10W. The device is supplied in a CPT3 package, suitable for surface mounting via Tape & Reel (TR) packaging. Key parameters include a Vce(sat) of 2V at 100mA/1A and a DC current gain (hFE) of at least 82 at 100mA/5V. The maximum collector cutoff current (ICBO) is 1µA, with an operating junction temperature up to 150°C. This component is utilized in industrial and automotive applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2V @ 100mA, 1A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce82 @ 100mA, 5V
Frequency - Transition50MHz
Supplier Device PackageCPT3
Current - Collector (Ic) (Max)1.5 A
Voltage - Collector Emitter Breakdown (Max)160 V
Power - Max10 W

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