2SB1260T100R
TRANS PNP 80V 1A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SB1260T100R is a PNP Bipolar Junction Transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 1A. Featuring a maximum power dissipation of 2W and a transition frequency of 100MHz, it is suitable for use in power management and signal processing circuits across various industrial sectors. The device is supplied in a MPT3 package, delivered on tape and reel. Key electrical characteristics include a minimum DC current gain (hFE) of 180 at 100mA collector current and 3V collector-emitter voltage, with a maximum Vce(sat) of 400mV at 50mA base current and 500mA collector current. The collector cutoff current (ICBO) is specified at a maximum of 1µA. The operating junction temperature range extends up to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 100mA, 3V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |
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