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2SB1260T100R

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2SB1260T100R

TRANS PNP 80V 1A MPT3

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

Quality Control: Learn More

Rohm Semiconductor's 2SB1260T100R is a PNP Bipolar Junction Transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 1A. Featuring a maximum power dissipation of 2W and a transition frequency of 100MHz, it is suitable for use in power management and signal processing circuits across various industrial sectors. The device is supplied in a MPT3 package, delivered on tape and reel. Key electrical characteristics include a minimum DC current gain (hFE) of 180 at 100mA collector current and 3V collector-emitter voltage, with a maximum Vce(sat) of 400mV at 50mA base current and 500mA collector current. The collector cutoff current (ICBO) is specified at a maximum of 1µA. The operating junction temperature range extends up to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 50mA, 500mA
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 100mA, 3V
Frequency - Transition100MHz
Supplier Device PackageMPT3
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max2 W

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