2SB1260T100Q
TRANS PNP 80V 1A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
Quality Control: Learn More
Rohm Semiconductor's 2SB1260T100Q is a PNP bipolar junction transistor designed for demanding applications. This surface-mount device, packaged in an MPT3 (TO-243AA), offers a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 1A. It features a power dissipation of 2W and a transition frequency of 100MHz, with a minimum DC current gain (hFE) of 120 at 100mA and 3V. The saturation voltage is a maximum of 400mV at 50mA/500mA, and the collector cutoff current is rated at 1µA (ICBO). Operating at temperatures up to 150°C, this component is suitable for use in automotive, industrial, and consumer electronics power management circuits. Supplied on tape and reel for automated assembly processes.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 3V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |
Request a Quote
Clients Also Buy
2SB1308T100P
TRANS PNP 20V 3A MPT3
2SD2118TLR
TRANS NPN 20V 5A CPT3
2SD2114KT146W
TRANS NPN 20V 0.5A SMT3
