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2SB1260T100Q

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2SB1260T100Q

TRANS PNP 80V 1A MPT3

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

Quality Control: Learn More

Rohm Semiconductor's 2SB1260T100Q is a PNP bipolar junction transistor designed for demanding applications. This surface-mount device, packaged in an MPT3 (TO-243AA), offers a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 1A. It features a power dissipation of 2W and a transition frequency of 100MHz, with a minimum DC current gain (hFE) of 120 at 100mA and 3V. The saturation voltage is a maximum of 400mV at 50mA/500mA, and the collector cutoff current is rated at 1µA (ICBO). Operating at temperatures up to 150°C, this component is suitable for use in automotive, industrial, and consumer electronics power management circuits. Supplied on tape and reel for automated assembly processes.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 50mA, 500mA
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 100mA, 3V
Frequency - Transition100MHz
Supplier Device PackageMPT3
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max2 W

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