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2SB1260T100P

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2SB1260T100P

TRANS PNP 80V 1A MPT3

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

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The Rohm Semiconductor 2SB1260T100P is a PNP Bipolar Junction Transistor (BJT) designed for surface mount applications. This component features a 80V collector-emitter breakdown voltage and a maximum collector current of 1A. With a DC current gain (hFE) of at least 82 at 100mA and 3V, and a transition frequency of 100MHz, it is suitable for various signal amplification and switching tasks. The transistor can dissipate up to 2W of power and operates at a maximum junction temperature of 150°C. It is housed in a TO-243AA (MPT3) package and supplied on tape and reel. This device finds application in power management and general-purpose amplification circuits within the consumer electronics and industrial automation sectors.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 50mA, 500mA
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce82 @ 100mA, 3V
Frequency - Transition100MHz
Supplier Device PackageMPT3
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max2 W

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