2SB1260T100P
TRANS PNP 80V 1A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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The Rohm Semiconductor 2SB1260T100P is a PNP Bipolar Junction Transistor (BJT) designed for surface mount applications. This component features a 80V collector-emitter breakdown voltage and a maximum collector current of 1A. With a DC current gain (hFE) of at least 82 at 100mA and 3V, and a transition frequency of 100MHz, it is suitable for various signal amplification and switching tasks. The transistor can dissipate up to 2W of power and operates at a maximum junction temperature of 150°C. It is housed in a TO-243AA (MPT3) package and supplied on tape and reel. This device finds application in power management and general-purpose amplification circuits within the consumer electronics and industrial automation sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 100mA, 3V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |