2SB1241TV2R
TRANS PNP 80V 1A ATVManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SB1241TV2R is a PNP bipolar junction transistor (BJT) designed for demanding applications. This component offers a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 1A, with a maximum power dissipation of 1W. It features a minimum DC current gain (hFE) of 180 at 100mA and 3V, and a transition frequency of 100MHz. The 2SB1241TV2R is supplied in an ATV package, suitable for through-hole mounting. Key electrical parameters include a collector cutoff current (ICBO) of 1µA and a Vce saturation of 400mV at 50mA and 500mA. This device is utilized in industrial control, power management, and consumer electronics. The part is provided in Tape & Box (TB) packaging for efficient handling.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 100mA, 3V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | ATV |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
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