2SB1241TV2Q
TRANS PNP 80V 1A ATVManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SB1241TV2Q is a PNP bipolar junction transistor (BJT) designed for demanding applications. This component offers a 80V collector-emitter breakdown voltage and a continuous collector current capability of 1A. It features a transition frequency of 100MHz and a maximum power dissipation of 1W. The minimum DC current gain (hFE) is specified at 120 at 100mA and 3V. The saturation voltage (Vce Sat) is a maximum of 400mV at 50mA collector current and 500mA base current. The cutoff current (ICBO) is a low 1µA. This transistor is supplied in a 3-SIP package with an ATV designation, suitable for through-hole mounting and delivered in Tape & Box (TB) packaging. Applications include power switching and amplification circuits in industrial and automotive sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 3V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | ATV |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
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