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2SB1239TV2

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2SB1239TV2

TRANS PNP DARL 40V 2A ATV

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

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Rohm Semiconductor's 2SB1239TV2 is a PNP Darlington bipolar junction transistor designed for high current gain applications. This component features a collector-emitter breakdown voltage of 40V and a continuous collector current capability of 2A. The device exhibits a minimum DC current gain (hFE) of 1000 at 500mA and 2V, with a saturation voltage (Vce(sat)) of 1.5V at 1.2mA collector current. It is rated for a maximum power dissipation of 1W and can operate at junction temperatures up to 150°C. The transistor is housed in a 3-SIP package and is supplied in Tape & Box packaging. This component is commonly utilized in industrial and automotive applications requiring efficient switching and amplification.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / Case3-SIP
Mounting TypeThrough Hole
Transistor TypePNP - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 1.2mA, 600mA
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 500mA, 2V
Frequency - Transition-
Supplier Device PackageATV
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max1 W

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