2SB1238TV2R
TRANS PNP 80V 0.7A ATVManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor 2SB1238TV2R is a PNP bipolar junction transistor (BJT). This through-hole component features a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 700mA. The device offers a minimum DC current gain (hFE) of 180 at 100mA and 3V, with a transition frequency of 100MHz. Maximum power dissipation is rated at 1W. The saturation voltage (Vce Sat) is a maximum of 400mV at 50mA base current and 500mA collector current. Collector cutoff current (ICBO) is a maximum of 500nA. This transistor operates at temperatures up to 150°C (TJ) and is supplied in an ATV package within Tape & Box (TB) packaging. Applications include general-purpose amplification and switching circuits in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 100mA, 3V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | ATV |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
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