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2SB1189T100R

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2SB1189T100R

TRANS PNP 80V 0.7A MPT3

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

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The Rohm Semiconductor 2SB1189T100R is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 700mA. With a transition frequency of 100MHz and a maximum power dissipation of 2W, it is suitable for use in consumer electronics and industrial control systems. The 2SB1189T100R is supplied in a compact MPT3 surface mount package, specifically the TO-243AA, presented on a tape and reel for automated assembly. Key electrical characteristics include a minimum DC current gain (hFE) of 180 at 100mA and 3V, and a collector-emitter saturation voltage of 400mV at 50mA and 500mA. The operating junction temperature range extends to 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 50mA, 500mA
Current - Collector Cutoff (Max)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 100mA, 3V
Frequency - Transition100MHz
Supplier Device PackageMPT3
Current - Collector (Ic) (Max)700 mA
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max2 W

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