2SB1189T100R
TRANS PNP 80V 0.7A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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The Rohm Semiconductor 2SB1189T100R is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This device features a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 700mA. With a transition frequency of 100MHz and a maximum power dissipation of 2W, it is suitable for use in consumer electronics and industrial control systems. The 2SB1189T100R is supplied in a compact MPT3 surface mount package, specifically the TO-243AA, presented on a tape and reel for automated assembly. Key electrical characteristics include a minimum DC current gain (hFE) of 180 at 100mA and 3V, and a collector-emitter saturation voltage of 400mV at 50mA and 500mA. The operating junction temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 100mA, 3V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |