2SB1189T100Q
TRANS PNP 80V 0.7A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SB1189T100Q is a PNP bipolar junction transistor (BJT) designed for robust performance in demanding applications. This component features a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 700mA. With a transition frequency of 100MHz and a maximum power dissipation of 2W, it is well-suited for power switching and amplification circuits. The minimum DC current gain (hFE) is rated at 120 at 100mA and 3V. The transistor exhibits a Vce(sat) of 400mV at 50mA and 500mA, with a collector cutoff current (ICBO) of 500nA. Packaged in the MPT3 (TO-243AA) surface mount configuration and supplied on tape and reel, the 2SB1189T100Q is suitable for use in industrial control, automotive, and consumer electronics sectors. It operates reliably up to a junction temperature of 150°C.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 3V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 700 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 2 W |