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2SB1189T100Q

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2SB1189T100Q

TRANS PNP 80V 0.7A MPT3

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

Quality Control: Learn More

Rohm Semiconductor's 2SB1189T100Q is a PNP bipolar junction transistor (BJT) designed for robust performance in demanding applications. This component features a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 700mA. With a transition frequency of 100MHz and a maximum power dissipation of 2W, it is well-suited for power switching and amplification circuits. The minimum DC current gain (hFE) is rated at 120 at 100mA and 3V. The transistor exhibits a Vce(sat) of 400mV at 50mA and 500mA, with a collector cutoff current (ICBO) of 500nA. Packaged in the MPT3 (TO-243AA) surface mount configuration and supplied on tape and reel, the 2SB1189T100Q is suitable for use in industrial control, automotive, and consumer electronics sectors. It operates reliably up to a junction temperature of 150°C.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 50mA, 500mA
Current - Collector Cutoff (Max)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 100mA, 3V
Frequency - Transition100MHz
Supplier Device PackageMPT3
Current - Collector (Ic) (Max)700 mA
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max2 W

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