2SB1188T100R
TRANS PNP 32V 2A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor 2SB1188T100R is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This component features a 32V collector-emitter breakdown voltage and a continuous collector current capability of up to 2A. The DC current gain (hFE) is a minimum of 180 at 500mA collector current and 3V collector-emitter voltage. With a transition frequency of 100MHz and a maximum power dissipation of 2W, this transistor is suitable for general-purpose amplification and switching circuits. The saturation voltage (Vce(sat)) is specified at a maximum of 800mV when operating at 200mA base current and 2A collector current. The operating junction temperature range extends up to 150°C. Packaged in a TO-243AA (MPT3) case and supplied on tape and reel, this device finds application in consumer electronics, industrial control, and automotive systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 500mA, 3V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 2 W |
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