2SB1188T100Q
TRANS PNP 32V 2A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SB1188T100Q is a PNP bipolar junction transistor (BJT) designed for surface mount applications. This device features a collector-emitter breakdown voltage of 32V and a continuous collector current capability of 2A, with a maximum power dissipation of 2W. The transistor exhibits a minimum DC current gain (hFE) of 120 at 500mA and 3V, and a transition frequency of 100MHz. Its saturation voltage (Vce(sat)) is specified at 800mV maximum for a base current of 200mA and collector current of 2A. The 2SB1188T100Q is housed in a compact MPT3 package, suitable for high-density board designs. This component is commonly utilized in power management and signal amplification circuits within the consumer electronics and industrial automation sectors. The part is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 3V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 2 W |
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