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2SB1186AE

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2SB1186AE

TRANS PNP 160V 1.5A TO220FP

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

Quality Control: Learn More

Rohm Semiconductor's 2SB1186AE is a PNP bipolar junction transistor (BJT) designed for robust performance in demanding applications. This component offers a 160V collector-emitter breakdown voltage and can handle a continuous collector current of up to 1.5A. With a transition frequency of 50MHz and a maximum power dissipation of 2W, it is suitable for power switching and amplification circuits. Key electrical characteristics include a minimum DC current gain (hFE) of 60 at 1A collector current and 5V collector-emitter voltage, and a maximum Vce(sat) of 2V at 100mA base current and 1A collector current. The TO-220FP package facilitates through-hole mounting, and the device is rated for operation up to 150°C junction temperature. This transistor finds utility in various industrial and consumer electronics, including power supplies, motor control, and general-purpose switching.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 10 week(s)Product Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2V @ 100mA, 1A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 1A, 5V
Frequency - Transition50MHz
Supplier Device PackageTO-220FP
Current - Collector (Ic) (Max)1.5 A
Voltage - Collector Emitter Breakdown (Max)160 V
Power - Max2 W

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