2SB1186AE
TRANS PNP 160V 1.5A TO220FPManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SB1186AE is a PNP bipolar junction transistor (BJT) designed for robust performance in demanding applications. This component offers a 160V collector-emitter breakdown voltage and can handle a continuous collector current of up to 1.5A. With a transition frequency of 50MHz and a maximum power dissipation of 2W, it is suitable for power switching and amplification circuits. Key electrical characteristics include a minimum DC current gain (hFE) of 60 at 1A collector current and 5V collector-emitter voltage, and a maximum Vce(sat) of 2V at 100mA base current and 1A collector current. The TO-220FP package facilitates through-hole mounting, and the device is rated for operation up to 150°C junction temperature. This transistor finds utility in various industrial and consumer electronics, including power supplies, motor control, and general-purpose switching.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 1A, 5V |
| Frequency - Transition | 50MHz |
| Supplier Device Package | TO-220FP |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Power - Max | 2 W |
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