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2SB1184TLR

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2SB1184TLR

TRANS PNP 50V 3A CPT3

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

Quality Control: Learn More

Rohm Semiconductor's 2SB1184TLR is a PNP bipolar junction transistor designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 3A. With a transition frequency of 70MHz and a maximum power dissipation of 1W, it is suitable for power management and signal amplification tasks. The device exhibits a minimum DC current gain (hFE) of 180 at 500mA and 3V, and a Vce(sat) of 1V at 200mA and 2A. The current collector cutoff (ICBO) is a maximum of 1µA. Operating at temperatures up to 150°C, this transistor is housed in a TO-252-3, DPAK package and is supplied on tape and reel. This component finds application in automotive and industrial electronics.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 2A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 500mA, 3V
Frequency - Transition70MHz
Supplier Device PackageCPT3
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max1 W

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