2SB1184TLR
TRANS PNP 50V 3A CPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SB1184TLR is a PNP bipolar junction transistor designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum continuous collector current of 3A. With a transition frequency of 70MHz and a maximum power dissipation of 1W, it is suitable for power management and signal amplification tasks. The device exhibits a minimum DC current gain (hFE) of 180 at 500mA and 3V, and a Vce(sat) of 1V at 200mA and 2A. The current collector cutoff (ICBO) is a maximum of 1µA. Operating at temperatures up to 150°C, this transistor is housed in a TO-252-3, DPAK package and is supplied on tape and reel. This component finds application in automotive and industrial electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 500mA, 3V |
| Frequency - Transition | 70MHz |
| Supplier Device Package | CPT3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 1 W |