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2SB1184TLQ

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2SB1184TLQ

TRANS PNP 60V 3A CPT3

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

Quality Control: Learn More

Rohm Semiconductor's 2SB1184TLQ is a PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 3A. With a transition frequency of 70MHz and a power dissipation of 1W, it is suitable for general-purpose switching and amplification tasks. The minimum DC current gain (hFE) is 120 at 500mA and 3V. The saturation voltage (Vce Sat) is a maximum of 1V at 200mA and 2A. This transistor is housed in a CPT3 (TO-252-3, DPAK) surface-mount package, supplied on tape and reel. It operates effectively at temperatures up to 150°C (TJ). The 2SB1184TLQ finds application in various industrial and consumer electronics, including power management and control circuits.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 200mA, 2A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 500mA, 3V
Frequency - Transition70MHz
Supplier Device PackageCPT3
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max1 W

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