2SB1184TLQ
TRANS PNP 60V 3A CPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SB1184TLQ is a PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 3A. With a transition frequency of 70MHz and a power dissipation of 1W, it is suitable for general-purpose switching and amplification tasks. The minimum DC current gain (hFE) is 120 at 500mA and 3V. The saturation voltage (Vce Sat) is a maximum of 1V at 200mA and 2A. This transistor is housed in a CPT3 (TO-252-3, DPAK) surface-mount package, supplied on tape and reel. It operates effectively at temperatures up to 150°C (TJ). The 2SB1184TLQ finds application in various industrial and consumer electronics, including power management and control circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 3V |
| Frequency - Transition | 70MHz |
| Supplier Device Package | CPT3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1 W |
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