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2SB1183TL

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2SB1183TL

TRANS PNP DARL 40V 2A CPT3

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

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Rohm Semiconductor's 2SB1183TL is a PNP Darlington bipolar junction transistor. This surface mount component, housed in a TO-252-3, DPAK (2 Leads + Tab), SC-63 package, offers a collector-emitter breakdown voltage of 40V and a maximum continuous collector current of 2A. It features a power dissipation of 1W and a saturation voltage of 1.5V at 1.2mA/600mA. The DC current gain (hFE) is a minimum of 1000 at 500mA/2V, with a collector cutoff current of 1µA. Operating temperature reaches up to 150°C. This device is commonly utilized in power switching and general purpose amplification applications across various industrial and consumer electronics sectors. It is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Transistor TypePNP - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 1.2mA, 600mA
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 500mA, 2V
Frequency - Transition-
Supplier Device PackageCPT3
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max1 W

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