2SB1182TLR
TRANS PNP 32V 2A CPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor PNP Bipolar Junction Transistor, part number 2SB1182TLR. This device features a 32V collector-emitter breakdown voltage and a maximum collector current of 2A. With a transition frequency of 100MHz and a power dissipation of 10W, it is suitable for applications requiring robust switching and amplification. The DC current gain (hFE) is a minimum of 180 at 500mA and 3V. It offers a saturation voltage (Vce Sat) of 800mV at 200mA and 2A. The transistor is housed in a TO-252-3, DPAK (SC-63) surface mount package, supplied on tape and reel. This component is utilized in automotive and industrial applications.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 500mA, 3V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | CPT3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 10 W |