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2SB1182TLR

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2SB1182TLR

TRANS PNP 32V 2A CPT3

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

Quality Control: Learn More

Rohm Semiconductor PNP Bipolar Junction Transistor, part number 2SB1182TLR. This device features a 32V collector-emitter breakdown voltage and a maximum collector current of 2A. With a transition frequency of 100MHz and a power dissipation of 10W, it is suitable for applications requiring robust switching and amplification. The DC current gain (hFE) is a minimum of 180 at 500mA and 3V. It offers a saturation voltage (Vce Sat) of 800mV at 200mA and 2A. The transistor is housed in a TO-252-3, DPAK (SC-63) surface mount package, supplied on tape and reel. This component is utilized in automotive and industrial applications.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic800mV @ 200mA, 2A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 500mA, 3V
Frequency - Transition100MHz
Supplier Device PackageCPT3
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)32 V
Power - Max10 W

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