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2SB1182TLQ

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2SB1182TLQ

TRANS PNP 32V 2A CPT3

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

Quality Control: Learn More

Rohm Semiconductor 2SB1182TLQ is a PNP Bipolar Junction Transistor (BJT) designed for demanding applications. This surface mount component, housed in a TO-252-3 (DPAK) package, offers a collector current capability of up to 2A and a collector-emitter breakdown voltage of 32V. With a maximum power dissipation of 10W and a transition frequency of 100MHz, it is suitable for power management and switching circuits. Key parameters include a minimum DC current gain (hFE) of 120 at 500mA/3V and a Vce(sat) of 800mV at 200mA/2A. The device operates reliably up to a junction temperature of 150°C. This transistor is frequently utilized in automotive and industrial equipment. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic800mV @ 200mA, 2A
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 500mA, 3V
Frequency - Transition100MHz
Supplier Device PackageCPT3
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)32 V
Power - Max10 W

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