2SB1182TLQ
TRANS PNP 32V 2A CPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor 2SB1182TLQ is a PNP Bipolar Junction Transistor (BJT) designed for demanding applications. This surface mount component, housed in a TO-252-3 (DPAK) package, offers a collector current capability of up to 2A and a collector-emitter breakdown voltage of 32V. With a maximum power dissipation of 10W and a transition frequency of 100MHz, it is suitable for power management and switching circuits. Key parameters include a minimum DC current gain (hFE) of 120 at 500mA/3V and a Vce(sat) of 800mV at 200mA/2A. The device operates reliably up to a junction temperature of 150°C. This transistor is frequently utilized in automotive and industrial equipment. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 800mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 3V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | CPT3 |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 10 W |
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