2SB1181TLR
TRANS PNP 80V 1A CPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor PNP Bipolar Junction Transistor (BJT), part number 2SB1181TLR. This device features a collector-emitter breakdown voltage of 80 V and a continuous collector current rating of 1 A. The 2SB1181TLR offers a minimum DC current gain (hFE) of 120 at 100mA and 3V, with a transition frequency of 100MHz. It is packaged in a TO-252-3, DPAK (SC-63) surface mount configuration, supplied on tape and reel. With a maximum power dissipation of 10 W and an operating junction temperature up to 150°C, this transistor is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 3V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | CPT3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 10 W |