2SB1181TLQ
TRANS PNP 80V 1A CPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor PNP Bipolar Junction Transistor, part number 2SB1181TLQ. This device features a collector-emitter breakdown voltage of 80V and a continuous collector current (Ic) capability of 1A. With a transition frequency of 100MHz and a maximum power dissipation of 10W, it is suitable for applications requiring moderate power handling and switching speeds. The minimum DC current gain (hFE) is rated at 120 at 100mA collector current and 3V collector-emitter voltage. Saturation voltage (Vce Sat) is specified at 400mV maximum at 50mA base current and 500mA collector current. The transistor is housed in a CPT3 surface mount package (TO-252-3, DPAK) and is supplied on tape and reel. This component finds application in various industrial and consumer electronics, including power switching and amplification circuits.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 3V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | CPT3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 10 W |
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