2SB1181TLP
TRANS PNP 80V 1A CPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SB1181TLP is a PNP bipolar junction transistor designed for demanding applications. This device offers a collector-emitter breakdown voltage of 80V and a continuous collector current capability of 1A. With a transition frequency of 100MHz and a maximum power dissipation of 1W, it is suitable for power switching and amplification circuits. Key parameters include a minimum DC current gain (hFE) of 82 at 100mA and 3V, and a Vce(sat) of 400mV at 50mA/500mA. The low collector cutoff current is 1µA (ICBO). The 2SB1181TLP is housed in a CPT3 package, also known as TO-252-3, DPAK, and supplied on tape and reel. This component finds utility in automotive, industrial, and consumer electronics power management designs.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 100mA, 3V |
| Frequency - Transition | 100MHz |
| Supplier Device Package | CPT3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |