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2SB1132T100R

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2SB1132T100R

TRANS PNP 32V 1A MPT3

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

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Rohm Semiconductor's 2SB1132T100R is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This MPT3 surface-mount device offers a 32V collector-emitter breakdown voltage and a maximum collector current of 1A. It features a DC current gain (hFE) of at least 180 at 100mA and 3V, with a transition frequency of 150MHz. The transistor exhibits a maximum power dissipation of 2W and a Vce(sat) of 500mV at 50mA/500mA. The 2SB1132T100R is supplied in a Tape & Reel (TR) package, suitable for automated assembly processes. This component finds application in consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-243AA
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 100mA, 3V
Frequency - Transition150MHz
Supplier Device PackageMPT3
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)32 V
Power - Max2 W

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