2SB1132T100Q
TRANS PNP 32V 1A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SB1132T100Q is a PNP bipolar junction transistor (BJT) designed for demanding applications. This device features a collector-emitter breakdown voltage (Vce) of 32V and a maximum collector current (Ic) of 1A. With a guaranteed minimum DC current gain (hFE) of 120 at 100mA and 3V, and a transition frequency (fT) of 150MHz, it offers robust performance for signal amplification and switching. The transistor has a maximum power dissipation of 2W and a low collector cutoff current of 500nA. Its high junction temperature rating of 150°C and the TO-243AA package (MPT3) with tape and reel packaging make it suitable for surface mount assembly in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 3V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 2 W |