2SB1132T100P
TRANS PNP 32V 1A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor PNP Bipolar Junction Transistor (BJT), part number 2SB1132T100P. This device features a 32V collector-emitter breakdown voltage and a maximum continuous collector current of 1A. With a transition frequency of 150MHz and a maximum power dissipation of 2W, the 2SB1132T100P is suitable for applications requiring efficient switching and amplification. The transistor type is PNP, and it offers a minimum DC current gain (hFE) of 82 at 100mA and 3V. Saturation voltage (Vce Sat) is a maximum of 500mV at 50mA, 500mA. Packaged in the MPT3 (TO-243AA) for surface mounting, this component is supplied on tape and reel. It is commonly employed in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 500nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 82 @ 100mA, 3V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 2 W |
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