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2SA854STPR

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2SA854STPR

TRANS PNP 32V 0.5A SPT

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

Quality Control: Learn More

Rohm Semiconductor 2SA854STPR is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This through-hole device features a collector-emitter breakdown voltage (Vce) of 32V and a maximum continuous collector current (Ic) of 500mA. With a transition frequency (fT) of 200MHz and a maximum power dissipation of 300mW, it is suitable for use in consumer electronics and industrial control systems. The device exhibits a minimum DC current gain (hFE) of 180 at 100mA and 3V. It is supplied in Tape & Box packaging, utilizing the SPT package type.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseSC-72 Formed Leads
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 50mA, 500mA
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce180 @ 100mA, 3V
Frequency - Transition200MHz
Supplier Device PackageSPT
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)32 V
Power - Max300 mW

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