2SA854STPQ
TRANS PNP 32V 0.5A SPTManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SA854STPQ is a PNP bipolar junction transistor designed for general-purpose amplification and switching applications. This component features a collector-emitter breakdown voltage of 32V and a continuous collector current capability of 500mA. The transistor exhibits a minimum DC current gain (hFE) of 120 at 100mA and 3V, with a transition frequency of 200MHz. Its low saturation voltage, specified at 600mV maximum at 50mA collector current and 500mA collector current, makes it suitable for low-power switching circuits. The 2SA854STPQ is housed in an SPT package with formed leads for through-hole mounting, offering a maximum power dissipation of 300mW and an operating junction temperature of 150°C. This device finds application in consumer electronics and industrial control systems. The component is supplied in Tape & Box packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | SC-72 Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 3V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | SPT |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 32 V |
| Power - Max | 300 mW |
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