2SA2199T2LR
TRANS PNP 50V 0.1A VMN3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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The Rohm Semiconductor 2SA2199T2LR is a PNP bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. Featuring a 50V collector-emitter breakdown voltage (Vce(max)) and a continuous collector current (Ic(max)) of 100mA, this device offers a minimum DC current gain (hFE) of 180 at 2mA/6V. Its transition frequency (fT) is 110MHz, enabling operation in a variety of signal processing tasks. The transistor dissipates a maximum power of 150mW and is packaged in a compact VMN3 (SOT-923F) surface-mount configuration, supplied on tape and reel. Typical applications include consumer electronics and industrial control systems. The Vce(sat) is specified at 300mV maximum for an Ic of 25mA driven by 2.5mA of base current.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-923F |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 25mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 180 @ 2mA, 6V |
| Frequency - Transition | 110MHz |
| Supplier Device Package | VMN3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
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