2SA2199T2LQ
TRANSISTOR; BIPOLAR; PNP;VMN3 PKManufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor NPN Bipolar Junction Transistor, part number 2SA2199T2LQ. This surface-mount component, housed in a VMN3 (SOT-923F) package, offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. It features a maximum power dissipation of 150 mW and a typical DC current gain (hFE) of 120 at 100 mA and 3 V. The saturation voltage (Vce(sat)) is 400 mV at 50 mA collector current and 500 mA base current. The collector cutoff current (ICBO) is a maximum of 100 nA. This device is suitable for applications in consumer electronics and industrial control systems. It is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-923F |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 3V |
| Supplier Device Package | VMN3 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
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