2SA2092TLQ
TRANS PNP 60V 1A TSMT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SA2092TLQ is a PNP bipolar junction transistor (BJT) designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 1A. With a transition frequency of 300MHz and a power dissipation of 500mW, it is suitable for general-purpose amplification and switching circuits. The DC current gain (hFE) is a minimum of 120 at 100mA and 2V. The Vce(sat) is specified at a maximum of 500mV with a base current of 50mA and collector current of 500mA. The collector cutoff current (ICBO) is a maximum of 1µA. Packaged in a TSMT3 (SC-96) and supplied on tape and reel, this device finds application in consumer electronics and industrial control systems requiring compact and efficient transistor solutions.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 13 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-96 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 2V |
| Frequency - Transition | 300MHz |
| Supplier Device Package | TSMT3 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 500 mW |
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