2SA2071T100Q
TRANS PNP 60V 3A MPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SA2071T100Q is a PNP Bipolar Junction Transistor (BJT). This device features a 60V collector-emitter breakdown voltage and a maximum continuous collector current of 3A. It offers a transition frequency of 180MHz and a maximum power dissipation of 2W. The 2SA2071T100Q is packaged in the MPT3 (TO-243AA) surface mount form factor, supplied on tape and reel. Key electrical specifications include a minimum DC current gain (hFE) of 120 at 100mA and 2V, and a saturation voltage (Vce(sat)) of 500mV at 200mA and 2A. The collector cutoff current (ICBO) is rated at 1µA. This component is suitable for applications in power management and general-purpose amplification circuits within the automotive and industrial sectors.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-243AA |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 2A |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 2V |
| Frequency - Transition | 180MHz |
| Supplier Device Package | MPT3 |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 2 W |
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