Home

Products

Discrete Semiconductor Products

Transistors

Bipolar (BJT)

Single Bipolar Transistors

2SA2007E

Banner
productimage

2SA2007E

TRANS PNP 60V 12A TO220FN

Manufacturer: Rohm Semiconductor

Categories: Single Bipolar Transistors

Quality Control: Learn More

Rohm Semiconductor's 2SA2007E is a PNP bipolar junction transistor designed for high-power applications. This component offers a collector-emitter breakdown voltage of 60V and a continuous collector current capability of 12A, with a maximum power dissipation of 25W. Featuring a minimum DC current gain (hFE) of 320 at 2A and 2V, and a transition frequency of 80MHz, the 2SA2007E is suitable for power switching and amplification circuits. The device exhibits a Vce(sat) of 500mV at 400mA and 8A, ensuring efficient operation. Packaged in a TO-220FN (TO-220-3 Full Pack) for through-hole mounting, this transistor is utilized in power supply units and industrial automation equipment.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 400mA, 8A
Current - Collector Cutoff (Max)10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce320 @ 2A, 2V
Frequency - Transition80MHz
Supplier Device PackageTO-220FN
Current - Collector (Ic) (Max)12 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max25 W

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy