2SA1952TLQ
TRANS PNP 60V 5A CPT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor's 2SA1952TLQ is a PNP bipolar junction transistor designed for high-performance applications. This component boasts a collector current capability of up to 5 A and a collector-emitter voltage breakdown of 60 V. With a transition frequency of 80 MHz and a maximum power dissipation of 1 W, it is suitable for demanding power switching and amplification tasks. The device exhibits a minimum DC current gain (hFE) of 120 at 1 A and 2 V, with a Vce(sat) of 500 mV at 200 mA and 4 A. The 2SA1952TLQ is supplied in a CPT3 package (TO-252-3, DPAK) for efficient surface mounting and operates across a wide temperature range up to 150°C. This transistor finds application in automotive electronics, industrial control systems, and consumer electronics where robust performance is critical. It is provided in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 200mA, 4A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1A, 2V |
| Frequency - Transition | 80MHz |
| Supplier Device Package | CPT3 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1 W |
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