2SA1774EBTLS
TRANS PNP 50V 0.15A EMT3Manufacturer: Rohm Semiconductor
Categories: Single Bipolar Transistors
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Rohm Semiconductor PNP Bipolar Junction Transistor, part number 2SA1774EBTLS. This device is characterized by a 50V collector-emitter breakdown voltage and a maximum collector current of 150mA. It features a transition frequency of 140MHz and a power dissipation of 150mW. The DC current gain (hFE) is specified at a minimum of 120 at 1mA and 6V. Collector cutoff current (ICBO) is a maximum of 100nA. The saturation voltage (Vce Sat) at 5mA base current and 50mA collector current is a maximum of 500mV. This component is supplied in an EMT3F (SOT-416FL) surface mount package, delivered on tape and reel. The operating junction temperature range extends to 150°C. This transistor is suitable for applications in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 18 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 6V |
| Frequency - Transition | 140MHz |
| Supplier Device Package | EMT3F (SOT-416FL) |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 150 mW |
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